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BSP40/41 BSP42/43
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s
s
s
s
SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS ARE BSP30, BSP31, BSP32 AND BSP33 RESPECTIVELY
2
1
SOT-223
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V CES V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (V BE = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature 70 60 70 5 1 0.1 2 -65 to 150 150 Value BSP40/BSP41 BSP42/BSP43 90 80 90 V V V V A A W
o o
Unit
C C 1/4
October 1995
BSP40/41/42/43
THERMAL DATA
R thj-amb * R thj-tab * Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8
o o
C/W C/W
* Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 60 V V CB = 60 V T j = 150 C 70 90 60 80 70 90 5
o
Min.
Typ.
Max. 100 50
Unit nA A V V V V V V V
I C = 100 A for BSP40/BSP41 for BSP42/BSP43 I C = 10 mA for BSP40/BSP41 for BSP42/BSP43 I C = 10 A for BSP40/BSP41 for BSP42/BSP43 I C = 10 A
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CES Collector-Emitter Breakdown Voltage (V BE = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
V (BR)EBO
V CE(sat) V BE(sat) h FE
I C = 150 mA I C = 500 mA I C = 150 mA I C = 500 mA
I B = 15 mA I B = 50 mA I B = 15 mA I B = 50 mA 5V 5V 5V 5V 5V 5V 10 40 30 30 100 50 100
0.25 0.5 1 1.2
V V V V
for BSP40/BSP41 I C = 100 A V CE = I C = 100 mA V CE = I C = 500 mA V CE = for BSP42/BSP43 I C = 100 A V CE = I C = 100 mA V CE = I C = 500 mA V CE = IE = 0 IC = 0
120
300 MHz 20 90 250 1000 pF pF ns ns
fT C CBO C EBO t on t off
Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Turn-on Time Turn-on Time
I C = 50 mA V CE = 10 V f = 35 MHz V CB = 10 V V EB = 0.5 V f = 1 MHz f = 1 MHz
I C = 100 mA
I B1 = -I B2 = 5 mA
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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BSP40/41/42/43
SOT223 MECHANICAL DATA
mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8
DIM.
L
l2
e1
a b f
d c e4
C
l1
B
C
E
g
P008B
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BSP40/41/42/43
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
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